PCOS 2016 TECHNICAL PROGRAM

 

November 24th (Thursday), 2016

 

 

12:00 – 13:00  Registration

13:00 – 13:05  Opening Remarks              Symposium Co-chair, Hajime Yuzurihara (Ricoh Company Ltd.)

13:05 – 13:10  Opening Speech                General Chair, Noboru Yamada (Kyoto University)

 

Session 1.  Session Chairs:        Yuji Sutou (Tohoku University)

                                                    Yuta Saito (National Institute of Advanced Science and Technology)

13:10 – 13:55 (Special)

1.  PCOS and phase-change alloys, GeSbTe                                                                            

Noboru Yamada

Department of Materials Science and Engineering, Kyoto University

 

13:55 – 14:40 (Special)

2.  Controlling Electronic Phase Changes in Correlated Electron Oxides                  

Teruo Kanki and Hidekazu Tanaka

The Institute of Scientific and Industrial Research, Osaka University

 

14:40 – 14:55  Coffee Break

 

Session 2.  Session Chairs:        Toshiharu Saiki (Keio University)

                                                    Toshimichi Shintani (Hitachi Co., Ltd.)

14:55 – 15:20 (Invited)

3.  Surface plasmons on phase-changed oxides                                                                                     

Hiroaki Matsui

               Faculty of Engineering, The University of Tokyo

 

15:20 – 15:45 (Invited)

4.  Frequency multiplication of microwave signal and spontaneous electrochemical nanostructure formation in Ag-Ge-(Sb)-Te                                       

Toshihiro Nakaoka, Yusuke Imanishi, Tatsuya Kanehira, Yukiomi Nishiyama, and Hitoshi Hayashi

               Faculty of Science and Technology, Sophia University

 

15:45 – 16:10 (Invited)

5.  Nonthermal Photo-Switching Process of Phase-Change Memory Material revealed by Ultrafast Electron Diffraction                                                                            

Masaki Hada1,2

1Okayama University

2PRESTO, Japan Science and Technology Agency

 

16:10 – 17:40  Poster Session

19:00 – 21:00  Reception


 


November 25th (Friday), 2016

 

 

Session 3.  Session Chairs:        Yuji Sutou (Tohoku University) 

                                    Yuta Saito (National Institute of Advanced Science and Technology)

9:00 – 10:30 (Tutorial)

6.  Structural properties of high-speed phase change materials                                

Toshiyuki Matsunaga

Kyoto University

 

10:30 – 10:45  Coffee Break

 

Session 4.  Session Chairs:        Keiichiro Yusu (NEDO)  

                                                    Masashi Kuwahara (National Institute of Advanced Science and Technology)

10:45 – 11:10 (Invited)

7.  Decision Making by Photonics

Makoto Naruse

National Institute of Information and Communications Technology

 

11:10 – 11:35

8.  Nanooptics- and Nanofluidics-based Computing Using Phase Change Material

Graduate School of Science and technology, Toshiharu Saiki

Keio University

 

11:35 – 13:00  Group Photo and Lunch Break

 

Session 5.  Session Chairs:        Toshimichi Shintani (Hitachi Co., Ltd.)  

                                                    Hajime Yuzurihara (Ricoh Company Ltd.)

13:00 – 13:25 (Invited)

9.  Phonon engineering by phononic crystal nanostructures

Masahiro Nomura1,2, Jeremie Maire1, Anufriev Roman1, Aymeric Ramiere1, and Ryoto Yanagisawa1

1Institute of Industrial Science, The University of Tokyo

2PRESTO, Japan Science and Technology Agency

 

13:25 – 13:50 (Invited)

10.  Potential of GeSbTe phase change materials for thermoelectric applications

Atsuko Kosuga1, Hiroki Ishibashi1, Yoshiki Kubota1, and Kouichi Kifune2

1Graduate School of Science, Osaka Prefecture University

2Faculty of Engineering, Hiroshima Institute of Technology

 

13:50 – 14:15 (Invited)

11.  Femtosecond non-equilibrium dynamics in phase-change materials

Muneaki Hase1,2

1Faculty of Pure and Applied Sciences, University of Tsukuba

2CREST, Japan Science and Technology Agency (JST)

 

14:15 – 14:30  Coffee Break

 

Session 6.  Session Chairs:        Noboru Yamada (Kyoto University)  

                                                    Masashi Kuwahara (National Institute of Advanced Science and Technology)

14:30 – 14:55 (Invited)

12.  Three Dimensional Architecture for High Density PCRAM

Yun-Heub. Song1, Jun-Seop An1, Satoshi Shindo2 and Yuji Sutou2

1Department of Electronic Engineering, Hanyang University, Republic of Korea

2Department of Materials Science, Tohoku University

 

14:55 – 15:20 (Invited)

13.  First-principles study of magnetic interactions in 3d transition metal-doped phase-change materials

T. Fukushima1, H. Katayama-Yoshida2, K. Sato3, H. Fujii4, E. Rabel5, R. Zeller5, P. H. Dederichs5, W. Zhang6, and R. Mazzarello6

1Institute for NanoScience Design, Osaka University

2Graduate School of Engineering Science, Osaka University

3Graduate School of Engineering, Osaka University

4Japan Synchrotron Radiation Research Institute, SPring-8

5Peter Gruenberg Institut and Institute for Advanced Simulation, Forschungszentrum Juelich and JARA

6Institute for Theoretical Solid State Physics and JARA-Fundamentals of Future Information Technology, RWTH Aachen University

 

15:20 – 15:45

14.  Physical properties of sputter grown Bi-Te and GeTe/Bi-Te superlattice films

Yuta Saito, Kirill Mitrofanov, Kotaro Makino, Paul Fons, Alexander V. Kolobov, Noriyuki Miyata,

and Junji Tominaga

Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

 

15:45 – 16:10

15.  A study on phase transition behaviors of GeCu2Te3 phase change material for PCRAM application

Yuji Sutou1, Satoshi Shindo1, Yuta Saito2, Junichi Koike1, Yun-Heub Song3

1Department of Materials Science, Tohoku University

2Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

3Department of Electronic Engineering, Hanyang University, Republic of Korea

 

16:10 – 16:15             Closing Remarks      Symposium Co-chair, Hajime Yuzurihara (Ricoh Company Ltd.)

16:15 – 16:20             Best Paper Award     General Chair, Noboru Yamada (Kyoto University)

 


 

Poster Session  November 24th (Thursday)

 

16:10 – 17:40

 

1.  First principles study of electronic and optical properties of liquid antimonide

H. Sano1, M. Kuwahara2, and G. Mizutani3

1Department of General Education, National Institute of Technology, Ishikawa College

2Electronics and Photonics Research Institute, National Institute of Advance Industrial Science and Technology

3School of Materials Science, Japan Advanced Institute of Science and Technology

 

2.  Disk shaped growth of silver electrodeposit in Ge-(Sb)-Te films

Naoki Shikakura, Kohei Arai, Yusuke Imanishi, and Toshihiro Nakaoka

Faculty of Science and Technology, Sophia University

 

3.  Theory for non-equilibrium carrier dynamics in two-dimensional topological insulators

Tomohiro Tamaya1,3, Satoru Konabe2, and Shiro Kawabata1,3

1National Institute of Advanced Industrial Science and Technology

2Research Institute for Science and Technology, Tokyo University of Science

3CREST, Japan Science and Technology Agency

 

4.  Intermediate-Range Order in GeSbTe Studied by Anomalous X-ray Scattering

Jens R. Stellhorn1,2, Wolf-Christian Pilgrim1, Bernhard Kaiser3, Nathalie Boudet4, Nils Blanc4,

Hiroo Tajiri5, Shinji Kohara6, Koji Kimura2, Shinya Hosokawa1,7

1Department of Chemistry, Philipps University of Marburg, Germany,

2Department of Physical Science and Engineering, Nagoya Institute of Technology

3Institute of Materials Science, Technical University of Darmstadt, Germany

4Institut Néel, University Grenoble Alpes and CNRS, France

5JASRI/SPring-8

6NIMS

7Department of Physics, Kumamoto University

 

5.  Effect of contact resistance on PRAM window in 3D structure

Jun-Seop An1, Yun-Heub Song1, Satoshi Shindo2 and Yuji Sutou2

1Department of Electronic Engineering, Hanyang University, Republic of Korea

2Department of Materials Science, Tohoku University

 

6.  Switching behavior of GeCu2Te3 phase change memory cell

Satoshi Shindo1, Yuji Sutou1, Junichi Koike1, Yuta Saito2, Jun-Seop An3, Yun-Heub Song3

1Department of Materials Science, Tohoku University

2Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

3Department of Electronic Engineering, Hanyang University, Republic of Korea

 

7.  Phase change behaviors of Cr-Ge-Te compound thin film

Shogo Hatayama, Satoshi Shindo, Yuji Sutou, and Junichi Koike

Department of Materials Science, Tohoku University

 

8.  Temporal optical response of GeSbTe/GeCuTe double-layered film and its application to pulse-delay discriminator

Ryota Akimoto1, Satoshi Shindo2, Yuji Sutou2, Masashi Kuwahara3, Makoto Naruse4, and

Toshiharu Saiki1

1Graduate School of Science and technology, Keio University

2Graduate School of Engineering, Tohoku University

3Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology

4National Institute of Information and Communications Technology

 

9.  Spectral tuning of surface phonon polariton confinement with phase change material for surface enhanced infrared absorption spectroscopy

M. Nakamura1, M. Kuwahara2 and T. Saiki1

1 Graduate School of Science and Technology, Keio University

2 Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology

 

10.  Coding two dimensional patterns into mode spectrum of silicon microcavity covered with a phase-change film

Sobhi Farrabi1, Yuya Kihara1, Masaki Nakamura1, Daichi Kataiwa1, Masashi Kuwahara2, and Toshiharu Saiki1

1Graduate School of Science and Technology, Keio University

2National Institute of Advanced Industrial Science andTechnology

 

11.  Control of Photoluminescence Polarization of InAs Nanowire Quantum Dot Using Phase Change Material

Ariyoshi Yamamura1CKei Yamaguchi1CNicolas Chauvin2, Michel Gendry3, Masashi Kuwahara4, and Toshiharu Saiki1

1Graduate School of Science and Technology, Keio University

2Institut des Nanotechnologies de Lyon, INSA-Lyon

3Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon

4Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology