PCOS 2016 TECHNICAL PROGRAM
November 24th (Thursday), 2016 |
|
12:00 – 13:00 Registration
13:00 – 13:05 Opening Remarks Symposium Co-chair, Hajime Yuzurihara (Ricoh Company Ltd.)
13:05 – 13:10 Opening Speech General
Chair, Noboru Yamada (Kyoto University)
Session 1. Session Chairs: Yuji Sutou (Tohoku University)
Yuta Saito (National
Institute of Advanced Science and Technology)
13:10 – 13:55 (Special)
1. PCOS and phase-change alloys, GeSbTe
Noboru Yamada
Department
of Materials Science and Engineering, Kyoto University
13:55
– 14:40 (Special)
2. Controlling Electronic Phase Changes in
Correlated Electron Oxides
Teruo Kanki and Hidekazu
Tanaka
The Institute of Scientific and Industrial Research, Osaka University
14:40 – 14:55 Coffee Break
Session 2. Session Chairs: Toshiharu
Saiki (Keio University)
Toshimichi Shintani
(Hitachi Co., Ltd.)
14:55 – 15:20 (Invited)
3. Surface plasmons
on phase-changed oxides
Hiroaki Matsui
Faculty
of Engineering, The University of Tokyo
15:20 – 15:45 (Invited)
Toshihiro Nakaoka,
Yusuke Imanishi, Tatsuya Kanehira,
Yukiomi Nishiyama, and
Hitoshi Hayashi
Faculty
of Science and Technology, Sophia University
15:45 – 16:10 (Invited)
Masaki Hada1,2
1Okayama University
2PRESTO, Japan Science and Technology Agency
16:10 – 17:40 Poster Session
19:00 – 21:00 Reception
November 25th (Friday), 2016 |
|
Session 3. Session Chairs: Yuji Sutou (Tohoku University)
Yuta Saito (National Institute
of Advanced Science and Technology)
9:00 – 10:30 (Tutorial)
6. Structural properties of high-speed
phase change materials
Toshiyuki Matsunaga
Kyoto University
10:30 – 10:45 Coffee Break
Session 4. Session Chairs: Keiichiro Yusu
(NEDO)
Masashi
Kuwahara (National Institute of Advanced Science and Technology)
10:45
– 11:10 (Invited)
7. Decision Making by Photonics
Makoto Naruse
National Institute of
Information and Communications Technology
11:10
– 11:35
8. Nanooptics-
and Nanofluidics-based Computing Using Phase Change
Material
Graduate School of Science and
technology, Toshiharu Saiki
Keio University
11:35 – 13:00 Group Photo and Lunch Break
Session 5. Session Chairs: Toshimichi
Shintani (Hitachi Co., Ltd.)
Hajime
Yuzurihara (Ricoh Company Ltd.)
13:00
– 13:25 (Invited)
9. Phonon engineering by phononic crystal nanostructures
Masahiro
Nomura1,2, Jeremie
Maire1, Anufriev Roman1, Aymeric Ramiere1, and Ryoto
Yanagisawa1
1Institute of Industrial Science, The University of Tokyo
2PRESTO, Japan Science and Technology
Agency
13:25
– 13:50 (Invited)
10. Potential of GeSbTe
phase change materials for thermoelectric applications
Atsuko Kosuga1,
Hiroki Ishibashi1, Yoshiki Kubota1,
and Kouichi Kifune2
1Graduate School of Science, Osaka Prefecture University
2Faculty of Engineering, Hiroshima Institute of Technology
13:50
– 14:15 (Invited)
11. Femtosecond non-equilibrium dynamics in
phase-change materials
Muneaki Hase1,2
1Faculty of Pure and Applied Sciences, University of Tsukuba
2CREST, Japan Science and Technology Agency (JST)
14:15 – 14:30 Coffee Break
Session 6. Session Chairs: Noboru Yamada (Kyoto University)
Masashi
Kuwahara (National Institute of Advanced Science and Technology)
14:30
– 14:55 (Invited)
12. Three Dimensional
Architecture for High Density PCRAM
Yun-Heub.
Song1, Jun-Seop An1,
Satoshi Shindo2 and Yuji Sutou2
1Department of Electronic Engineering, Hanyang
University, Republic of Korea
2Department of Materials Science, Tohoku University
14:55
– 15:20 (Invited)
13. First-principles study of magnetic
interactions in 3d transition metal-doped phase-change materials
T. Fukushima1, H.
Katayama-Yoshida2, K. Sato3, H. Fujii4, E.
Rabel5, R. Zeller5, P. H. Dederichs5, W. Zhang6,
and R. Mazzarello6
1Institute for NanoScience Design, Osaka
University
2Graduate School of Engineering Science, Osaka University
3Graduate School of Engineering, Osaka University
4Japan Synchrotron Radiation Research Institute, SPring-8
5Peter Gruenberg Institut and Institute
for Advanced Simulation, Forschungszentrum Juelich and JARA
6Institute for Theoretical Solid State Physics and
JARA-Fundamentals of Future Information Technology, RWTH Aachen University
15:20
– 15:45
14. Physical properties of sputter grown Bi-Te and GeTe/Bi-Te superlattice films
Yuta Saito, Kirill Mitrofanov, Kotaro
Makino, Paul Fons, Alexander V. Kolobov, Noriyuki
Miyata,
and Junji Tominaga
Nanoelectronics Research Institute, National Institute of Advanced Industrial
Science and Technology
15:45
– 16:10
15. A study on phase transition behaviors of
GeCu2Te3 phase change material for PCRAM application
Yuji Sutou1, Satoshi
Shindo1, Yuta Saito2, Junichi
Koike1, Yun-Heub Song3
1Department of Materials Science, Tohoku University
2Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
3Department
of Electronic Engineering, Hanyang University,
Republic of Korea
16:10 – 16:15 Closing Remarks Symposium Co-chair, Hajime Yuzurihara (Ricoh
Company Ltd.)
16:15 – 16:20 Best Paper Award General
Chair, Noboru Yamada (Kyoto University)
Poster Session November 24th (Thursday)
16:10
– 17:40
1. First principles study of electronic and
optical properties of liquid antimonide
H. Sano1, M.
Kuwahara2, and G. Mizutani3
1Department of General Education, National Institute of Technology,
Ishikawa College
2Electronics and Photonics Research Institute, National Institute
of Advance Industrial Science and Technology
3School of Materials Science, Japan Advanced Institute of Science
and Technology
2. Disk shaped growth of silver
electrodeposit in Ge-(Sb)-Te films
Naoki Shikakura,
Kohei Arai, Yusuke Imanishi,
and Toshihiro Nakaoka
Faculty of Science and
Technology, Sophia University
3. Theory for non-equilibrium carrier
dynamics in two-dimensional topological insulators
Tomohiro
Tamaya1,3, Satoru Konabe2, and Shiro Kawabata1,3
1National Institute of Advanced Industrial Science and Technology
2Research Institute for Science and Technology,
Tokyo University of Science
3CREST, Japan Science and Technology Agency
4. Intermediate-Range Order in GeSbTe Studied by Anomalous X-ray Scattering
Jens R.
Stellhorn1,2, Wolf-Christian Pilgrim1, Bernhard Kaiser3,
Nathalie Boudet4, Nils Blanc4,
Hiroo Tajiri5, Shinji Kohara6, Koji Kimura2,
Shinya Hosokawa1,7
1Department of Chemistry, Philipps University of Marburg, Germany,
2Department of Physical Science and Engineering, Nagoya Institute of Technology
3Institute of Materials Science, Technical University of Darmstadt, Germany
4Institut Néel, University Grenoble Alpes and CNRS, France
5JASRI/SPring-8
6NIMS
7Department of Physics, Kumamoto University
5. Effect of contact resistance on PRAM
window in 3D structure
Jun-Seop
An1, Yun-Heub Song1, Satoshi
Shindo2 and Yuji Sutou2
1Department of Electronic Engineering, Hanyang University, Republic of Korea
2Department of Materials Science, Tohoku University
6. Switching behavior of GeCu2Te3
phase change memory cell
Satoshi Shindo1,
Yuji Sutou1, Junichi Koike1, Yuta
Saito2, Jun-Seop An3, Yun-Heub Song3
1Department of Materials Science, Tohoku University
2Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
3Department of Electronic Engineering, Hanyang University, Republic of Korea
7. Phase change behaviors of Cr-Ge-Te compound thin film
Shogo Hatayama, Satoshi Shindo, Yuji Sutou, and Junichi
Koike
Department of Materials Science, Tohoku University
Ryota Akimoto1, Satoshi Shindo2, Yuji Sutou2,
Masashi Kuwahara3, Makoto Naruse4, and
Toshiharu Saiki1
1Graduate School of Science and technology, Keio University
2Graduate School of Engineering, Tohoku University
3Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology
4National Institute of Information and Communications Technology
M. Nakamura1, M.
Kuwahara2 and T. Saiki1
1 Graduate School of Science and Technology, Keio University
2 Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology
Sobhi Farrabi1, Yuya Kihara1,
Masaki Nakamura1, Daichi Kataiwa1,
Masashi Kuwahara2, and Toshiharu Saiki1
1Graduate
School of Science and Technology, Keio University
2National Institute of Advanced Industrial Science andTechnology
11. Control of Photoluminescence
Polarization of InAs Nanowire Quantum Dot Using Phase
Change Material
Ariyoshi Yamamura1CKei Yamaguchi1CNicolas Chauvin2,
Michel Gendry3, Masashi Kuwahara4, and Toshiharu Saiki1
1Graduate
School of Science and Technology, Keio University
2Institut des Nanotechnologies de Lyon, INSA-Lyon
3Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon
4Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology